Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP
Identifieur interne : 012397 ( Main/Repository ); précédent : 012396; suivant : 012398Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP
Auteurs : RBID : Pascal:00-0040539Descripteurs français
- Pascal (Inist)
- 7361E, 7350J, 8115H, 6835C, 7350D, 7120N, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Couche épitaxique semiconductrice, Effet Hall, Résistivité électrique, Epitaxie jet moléculaire, Croissance semiconducteur, Structure interface, Structure dislocation, Mobilité électron, Densité porteur charge, Semiconducteur bande interdite étroite.
English descriptors
- KwdEn :
- Carrier density, Dislocation structure, Electrical resistivity, Electron mobility, Experimental study, Gallium compounds, Hall effect, III-V semiconductors, Indium compounds, Interface structure, Molecular beam epitaxy, Narrow band gap semiconductors, Semiconductor epitaxial layers, Semiconductor growth.
Abstract
Hall effect and electrical resistivity measurements were carried out on undoped InAs thin films grown by molecular-beam epitaxy directly on (001)GaP substrates. The large lattice mismatch between these two compounds results in a high density array of misfit dislocations at the heterointerface and threading dislocations in the InAs epilayer. The threading dislocation density varies with epilayer thickness, with the largest proportion being present near the heterointerface. This leads to variation of both the carrier concentration and electron mobility with thickness. Consequently, a multilayer analysis was used to interpret the transport data. This analysis yields a temperature-independent carrier concentration, which indicates degenerate donor levels in this narrow band-gap material. Room temperature mobilities in excess of 10000 cm2/Vs were obtained for thick InAs layers despite dislocation densities of 1010cm-2. The relative insensitivity of the mobility to temperature suggests that temperature-independent scattering dominates over ionized impurity/defect and phonon scattering. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP</title><author><name sortKey="Gopal, V" uniqKey="Gopal V">V. Gopal</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>School of Materials Engineering, Purdue University, W. Lafayette, Indiana 47907</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>School of Materials Engineering, Purdue University, W. Lafayette</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, Purdue University, W. Lafayette, Indiana 47907</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Department of Physics, Purdue University, W. Lafayette</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Souw, Victor" uniqKey="Souw V">Victor Souw</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>School of Materials Engineering, Purdue University, W. Lafayette, Indiana 47907</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>School of Materials Engineering, Purdue University, W. Lafayette</wicri:cityArea></affiliation></author><author><name sortKey="Chen, E H" uniqKey="Chen E">E.-H. Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>School of Materials Engineering, Purdue University, W. Lafayette, Indiana 47907</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>School of Materials Engineering, Purdue University, W. Lafayette</wicri:cityArea></affiliation></author><author><name sortKey="Kvam, E P" uniqKey="Kvam E">E. P. Kvam</name></author><author><name sortKey="Mcelfresh, M" uniqKey="Mcelfresh M">M. Mcelfresh</name></author><author><name sortKey="Woodall, J M" uniqKey="Woodall J">J. M. Woodall</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>School of Materials Engineering, Purdue University, W. Lafayette, Indiana 47907</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>School of Materials Engineering, Purdue University, W. Lafayette</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0040539</idno><date when="2000-02-01">2000-02-01</date><idno type="stanalyst">PASCAL 00-0040539 AIP</idno><idno type="RBID">Pascal:00-0040539</idno><idno type="wicri:Area/Main/Corpus">013D70</idno><idno type="wicri:Area/Main/Repository">012397</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term><term>Dislocation structure</term><term>Electrical resistivity</term><term>Electron mobility</term><term>Experimental study</term><term>Gallium compounds</term><term>Hall effect</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface structure</term><term>Molecular beam epitaxy</term><term>Narrow band gap semiconductors</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>7350J</term><term>8115H</term><term>6835C</term><term>7350D</term><term>7120N</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Couche épitaxique semiconductrice</term><term>Effet Hall</term><term>Résistivité électrique</term><term>Epitaxie jet moléculaire</term><term>Croissance semiconducteur</term><term>Structure interface</term><term>Structure dislocation</term><term>Mobilité électron</term><term>Densité porteur charge</term><term>Semiconducteur bande interdite étroite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Hall effect and electrical resistivity measurements were carried out on undoped InAs thin films grown by molecular-beam epitaxy directly on (001)GaP substrates. The large lattice mismatch between these two compounds results in a high density array of misfit dislocations at the heterointerface and threading dislocations in the InAs epilayer. The threading dislocation density varies with epilayer thickness, with the largest proportion being present near the heterointerface. This leads to variation of both the carrier concentration and electron mobility with thickness. Consequently, a multilayer analysis was used to interpret the transport data. This analysis yields a temperature-independent carrier concentration, which indicates degenerate donor levels in this narrow band-gap material. Room temperature mobilities in excess of 10000 cm2/Vs were obtained for thick InAs layers despite dislocation densities of 10<sup>10</sup>cm<sup>-2</sup>. The relative insensitivity of the mobility to temperature suggests that temperature-independent scattering dominates over ionized impurity/defect and phonon scattering. © 2000 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>87</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP</s1></fA08><fA11 i1="01" i2="1"><s1>GOPAL (V.)</s1></fA11><fA11 i1="02" i2="1"><s1>SOUW (Victor)</s1></fA11><fA11 i1="03" i2="1"><s1>CHEN (E.-H.)</s1></fA11><fA11 i1="04" i2="1"><s1>KVAM (E. P.)</s1></fA11><fA11 i1="05" i2="1"><s1>MCELFRESH (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>WOODALL (J. M.)</s1></fA11><fA14 i1="01"><s1>School of Materials Engineering, Purdue University, W. Lafayette, Indiana 47907</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Purdue University, W. Lafayette, Indiana 47907</s1></fA14><fA14 i1="03"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1></fA14><fA14 i1="04"><s1>School of Materials Engineering, Purdue University, W. Lafayette, Indiana 47907</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="05"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1></fA14><fA20><s1>1350-1355</s1></fA20><fA21><s1>2000-02-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0040539</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Hall effect and electrical resistivity measurements were carried out on undoped InAs thin films grown by molecular-beam epitaxy directly on (001)GaP substrates. The large lattice mismatch between these two compounds results in a high density array of misfit dislocations at the heterointerface and threading dislocations in the InAs epilayer. The threading dislocation density varies with epilayer thickness, with the largest proportion being present near the heterointerface. This leads to variation of both the carrier concentration and electron mobility with thickness. Consequently, a multilayer analysis was used to interpret the transport data. This analysis yields a temperature-independent carrier concentration, which indicates degenerate donor levels in this narrow band-gap material. Room temperature mobilities in excess of 10000 cm2/Vs were obtained for thick InAs layers despite dislocation densities of 10<sup>10</sup>cm<sup>-2</sup>. 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